IPS65R1K5CEAKMA1

Specifications

Gate Charge Qg Max Vgs

10.5nC @ 10V

Avalanche Energy Rating Eas

26 mJ

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Turn On Delay Time

7.7 ns

Number Of Elements

1

Vgs Max

±20V

Terminal Sayısı

3

Seri

CoolMOS™ CE

Fabrika Tedarik Süresi

6 Weeks

Number Of Channels

1

Montaj Tipi

Through Hole

Parça Durumu

Obsolete

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSIP-T3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Dual Supply Voltage

650V

Kılıf / Paket

TO-251-3 Stub Leads, IPak

Current Continuous Drain Id25

3.1A Tc

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-40°C~150°C TJ

Continuous Drain Current Id

3.1A

Transistor Element Material

SILICON

Vgsth Max Id

3.5V @ 100μA

Input Capacitance Ciss Max Vds

225pF @ 100V

Yayın Yılı

2008

Element Configuration

Single

Pulsed Drain Currentmax Idm

8.3A

Case Connection

DRAIN

Turn Off Delay Time

33 ns

Ambalaj

Tube

Rise Time

5.9ns

Power Dissipation Max

28W Tc

RoHS Durumu

RoHS Compliant

Rds On Max Id Vgs

1.5 Ω @ 1A, 10V

Halogen Free

Halogen Free

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel