IPP80R1K4P7XKSA1

Specifications

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Terminal Sayısı

3

Vgsth Max Id

3.5V @ 70μA

Kurşunsuz Kodu

yes

Seri

CoolMOS™

Parça Durumu

Active

Fet Type

N-Channel

Ds Breakdown Voltagemin

800V

Jesd30 Code

R-PSFM-T3

Montaj Tipi

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Kılıf / Paket

TO-220-3

Vgs Max

±20V

Transistor Application

SWITCHING

Jedec95 Code

TO-220AB

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

4A Tc

Power Dissipation Max

32W Tc

Fet Feature

Super Junction

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Yüzey Montaj

NO

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Rds On Max Id Vgs

1.4 Ω @ 1.4A, 10V

Terminal Pozisyonu

SINGLE

Pulsed Drain Currentmax Idm

8.9A

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

8 mJ

Gate Charge Qg Max Vgs

10nC @ 10V

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

800V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2016

Input Capacitance Ciss Max Vds

250pF @ 500V

Çalışma Sıcaklığı

-55°C~150°C TJ