IPP80N06S2L11AKSA2

Specifications

Fet Type

N-Channel

Rise Time

32ns

Seri

OptiMOS™

Parça Durumu

Obsolete

Kurşunsuz Kodu

yes

Kurşunsuz

Contains Lead

Vgsth Max Id

2V @ 93μA

Terminal Sayısı

3

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Montaj Tipi

Through Hole

Ambalaj

Tube

Max Dual Supply Voltage

55V

Drainsource On Resistancemax

0.0147Ohm

Montaj

Through Hole

Fall Time Typ

13 ns

Additional Feature

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Rds On Max Id Vgs

10.7m Ω @ 40A, 10V

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

80A

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

3

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

158W Tc

Fabrika Tedarik Süresi

14 Weeks

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

2075pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2010

Turn On Delay Time

11 ns

JESD-609 Kodu

e3

Turn Off Delay Time

46 ns

Gate Charge Qg Max Vgs

80nC @ 10V