IPP80N04S4L04AKSA1

Specifications

Continuous Drain Current Id

80A

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

3

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

4.3m Ω @ 80A, 10V

Jedec95 Code

TO-220AB

Number Of Elements

1

Fabrika Tedarik Süresi

16 Weeks

Power Dissipation Max

71W Tc

Current Continuous Drain Id25

80A Tc

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2010

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Delay Time

7 ns

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

4690pF @ 25V

Avalanche Energy Rating Eas

100 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

4.5V 10V

JESD-609 Kodu

e3

Turn Off Delay Time

22 ns

Gate Charge Qg Max Vgs

60nC @ 10V

Parça Durumu

Active

Seri

OptiMOS™

Rise Time

12ns

Kurşunsuz

Contains Lead

Fet Type

N-Channel

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

2.2V @ 35μA

Terminal Sayısı

3

Max Dual Supply Voltage

40V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Montaj Tipi

Through Hole

Vgs Max

+20V, -16V