Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Seri
- OptiMOS™
- Rise Time
- 50ns
- Parça Durumu
- Obsolete
- Kurşunsuz
- Contains Lead
- Vgsth Max Id
- 2V @ 250μA
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- RoHS Durumu
- RoHS Compliant
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-220-3
- Power Dissipation
- 300W
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Max Dual Supply Voltage
- 40V
- Montaj
- Through Hole
- Fall Time Typ
- 27 ns
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Rds On Max Id Vgs
- 3.4m Ω @ 80A, 10V
- Terminal Pozisyonu
- SINGLE
- Continuous Drain Current Id
- 80A
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Power Dissipation Max
- 300W Tc
- Current Continuous Drain Id25
- 80A Tc
- Number Of Elements
- 1
- Operating Mode
- ENHANCEMENT MODE
- Jedec95 Code
- TO-220AB
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 6000pF @ 25V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2006
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Turn On Delay Time
- 19 ns
- ECCN Kodu
- EAR99
- Turn Off Delay Time
- 77 ns
- Gate Charge Qg Max Vgs
- 213nC @ 10V
- Halogen Free
- Halogen Free
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
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