Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fall Time Typ
- 4 ns
- Drainsource On Resistancemax
- 0.074Ohm
- Fet Type
- N-Channel
- Kurşunsuz Kodu
- yes
- Vgsth Max Id
- 3.5V @ 1.4mA
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 3020pF @ 100V
- Yayın Yılı
- 2008
- Gate Charge Qg Max Vgs
- 17nC @ 10V
- Turn Off Delay Time
- 56 ns
- Pulsed Drain Currentmax Idm
- 151A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Kaplaması
- Tin (Sn)
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 700V
- Jedec95 Code
- TO-220AB
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
- Montaj Tipi
- Through Hole
- Ambalaj
- Tube
- Max Dual Supply Voltage
- 650V
- Montaj
- Through Hole
- Kurşunsuz
- Lead Free
- Seri
- CoolMOS™
- Rise Time
- 7ns
- Parça Durumu
- Last Time Buy
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Turn On Delay Time
- 11 ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- JESD-609 Kodu
- e3
- Halogen Free
- Halogen Free
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating Eas
- 915 mJ
- Rds On Max Id Vgs
- 74m Ω @ 13.9A, 10V
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