IPP60R520E6XKSA1

Specifications

Drain To Source Voltage Vdss

600V

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.52Ohm

Drain To Source Breakdown Voltage

650V

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Continuous Drain Current Id

8.1A

Transistor Element Material

SILICON

Turn Off Delay Time

75 ns

Rds On Max Id Vgs

520m Ω @ 2.8A, 10V

Uzunluk

10.36mm

Terminal Sayısı

3

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Pin Sayısı

3

Parça Durumu

Obsolete

Power Dissipation Max

66W Tc

Turn On Delay Time

12 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™

Terminal Kaplaması

Tin (Sn)

Radyasyon Dayanımı

No

Current Continuous Drain Id25

8.1A Tc

Element Configuration

Single

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

23.4nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Yüzey Montaj

NO

Fet Type

N-Channel

Fall Time Typ

9 ns

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

4.57mm

Input Capacitance Ciss Max Vds

512pF @ 100V

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Pin Sayısı

3

Rise Time

10ns