IPP60R280P7XKSA1

Specifications

Current Continuous Drain Id25

12A Tc

Gate Charge Qg Max Vgs

18nC @ 10V

Drainsource On Resistancemax

0.28Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

600V

Input Capacitance Ciss Max Vds

761pF @ 400V

Transistor Element Material

SILICON

Rds On Max Id Vgs

280m Ω @ 3.8A, 10V

Terminal Sayısı

3

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~150°C TJ

Ds Breakdown Voltagemin

600V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

38 mJ

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Vgs Max

±20V

Case Connection

DRAIN

Kılıf / Paket

TO-220-3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2014

Seri

CoolMOS™ P7

Parça Durumu

Active

Power Dissipation Max

53W Tc

Jesd30 Code

R-PSFM-T3

Vgsth Max Id

4V @ 190μA

Pulsed Drain Currentmax Idm

36A