IPP60R190P6XKSA1

Specifications

Input Capacitance Ciss Max Vds

1750pF @ 100V

Continuous Drain Current Id

20.2A

Transistor Element Material

SILICON

Rds On Max Id Vgs

190m Ω @ 7.6A, 10V

Turn Off Delay Time

45 ns

Terminal Sayısı

3

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Fall Time Typ

7 ns

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

20.2A Tc

Gate Charge Qg Max Vgs

11nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Turn On Delay Time

15 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Seri

CoolMOS™ P6

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

151W Tc

Pulsed Drain Currentmax Idm

57A

Vgsth Max Id

4.5V @ 630μ

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Jedec95 Code

TO-220AB

Vgs Max

±20V

Montaj Tipi

Through Hole

Case Connection

DRAIN