IPP60R180P7XKSA1

Specifications

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~150°C TJ

Ds Breakdown Voltagemin

600V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Fet Type

N-Channel

Rds On Max Id Vgs

180m Ω @ 5.6A, 10V

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

1081pF @ 400V

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

650V

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

25nC @ 10V

Drainsource On Resistancemax

0.18Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

18A Tc

Pulsed Drain Currentmax Idm

53A

Vgsth Max Id

4V @ 280μA

Parça Durumu

Active

Power Dissipation Max

72W Tc

Jesd30 Code

R-PSFM-T3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ P7

Yayın Yılı

2014

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

56 mJ

Montaj Tipi

Through Hole

Vgs Max

±20V

Case Connection

DRAIN

Kılıf / Paket

TO-220-3

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1