IPP60R125C6XKSA1

Specifications

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

7 ns

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Rds On Max Id Vgs

125m Ω @ 14.5A, 10V

Turn Off Delay Time

83 ns

Terminal Sayısı

3

Continuous Drain Current Id

30A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2127pF @ 100V

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

96nC @ 10V

Current Continuous Drain Id25

30A Tc

Qualification Status

Not Qualified

Pulsed Drain Currentmax Idm

89A

Vgsth Max Id

3.5V @ 960μA

Montaj

Through Hole

Power Dissipation Max

219W Tc

Parça Durumu

Not For New Designs

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™

Yayın Yılı

2015

Turn On Delay Time

15 ns

Power Dissipation

219W

Max Dual Supply Voltage

600V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Rise Time

12ns

Jedec95 Code

TO-220AB

Pin Sayısı

3