IPP60R120P7XKSA1

Specifications

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Vgs Max

±20V

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

82 mJ

Jedec95 Code

TO-220AB

Seri

CoolMOS™ P7

Yayın Yılı

2014

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

95W Tc

Parça Durumu

Active

Pulsed Drain Currentmax Idm

78A

Vgsth Max Id

4V @ 410μA

Current Continuous Drain Id25

26A Tc

Ambalaj

Tube

Drainsource On Resistancemax

0.12Ohm

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

36nC @ 10V

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Drain To Source Voltage Vdss

600V

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1544pF @ 400V

Terminal Sayısı

3

Rds On Max Id Vgs

120m Ω @ 8.2A, 10V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V