IPP60R120C7XKSA1

Specifications

Transistor Element Material

SILICON

Continuous Drain Current Id

19A

Input Capacitance Ciss Max Vds

1500pF @ 400V

Terminal Sayısı

3

Rds On Max Id Vgs

120m Ω @ 7.8A, 10V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

19A Tc

Ambalaj

Tube

Drainsource On Resistancemax

0.12Ohm

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

34nC @ 10V

Kurşunsuz Kodu

yes

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Seri

CoolMOS™ C7

Yayın Yılı

1997

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

92W Tc

Montaj

Through Hole

Parça Durumu

Active

Pulsed Drain Currentmax Idm

66A

Vgsth Max Id

4V @ 390μA

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Kılıf / Paket

TO-220-3

Max Dual Supply Voltage

600V

Case Connection

DRAIN

Kurşunsuz

Lead Free

Vgs Max

±20V

Montaj Tipi

Through Hole