IPP60R060P7XKSA1

Specifications

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

600V

Current Continuous Drain Id25

48A Tc

Gate Charge Qg Max Vgs

67nC @ 10V

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.06Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Input Capacitance Ciss Max Vds

2895pF @ 400V

Transistor Element Material

SILICON

Terminal Sayısı

3

Rds On Max Id Vgs

60m Ω @ 15.9A, 10V

Montaj Tipi

Through Hole

Vgs Max

±20V

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

159 mJ

Kılıf / Paket

TO-220-3

Case Connection

DRAIN

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

164W Tc

Pulsed Drain Currentmax Idm

151A

Vgsth Max Id

4V @ 800μA

Seri

CoolMOS™ P7

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)