IPP60R060C7XKSA1

Specifications

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

35A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2850pF @ 400V

Rds On Max Id Vgs

60m Ω @ 15.9A, 10V

Terminal Sayısı

3

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

35A Tc

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.06Ohm

Ambalaj

Tube

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

68nC @ 10V

Power Dissipation Max

162W Tc

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Parça Durumu

Active

Vgsth Max Id

4V @ 800μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Seri

CoolMOS™ C7

Max Dual Supply Voltage

600V

Case Connection

DRAIN

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Avalanche Energy Rating Eas

159 mJ

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Vgs Max

±20V

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant