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IPP530N15N3GXKSA1

Infineon Technologies

IPP530N15N3GXKSA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Vgsth Max Id
4V @ 35μA
Pulsed Drain Currentmax Idm
84A
Qualification Status
Not Qualified
Parça Durumu
Not For New Designs
Power Dissipation Max
68W Tc
Montaj
Through Hole
Yayın Yılı
2008
Seri
OptiMOS™
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn On Delay Time
9 ns
Montaj Tipi
Through Hole
Vgs Max
±20V
Pin Sayısı
3
Avalanche Energy Rating Eas
60 mJ
Jedec95 Code
TO-220AB
Kılıf / Paket
TO-220-3
Kurşunsuz
Lead Free
Max Dual Supply Voltage
150V
Halogen Free
Halogen Free
Pin Sayısı
3
RoHS Durumu
ROHS3 Compliant
Fabrika Tedarik Süresi
18 Weeks
Number Of Elements
1
Fall Time Typ
3 ns
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Çalışma Sıcaklığı
-55°C~175°C TJ
ECCN Kodu
EAR99
Drive Voltage Max Rds On Min Rds On
8V 10V
Gate To Source Voltage Vgs
20V
Transistor Application
SWITCHING
Configuration
SINGLE WITH BUILT-IN DIODE
Fet Type
N-Channel
Terminal Sayısı
3
Rds On Max Id Vgs
53m Ω @ 18A, 10V
Turn Off Delay Time
13 ns
Input Capacitance Ciss Max Vds
887pF @ 75V
Transistor Element Material
SILICON
Continuous Drain Current Id
21A
Terminal Kaplaması
Tin (Sn)

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