IPP50R399CPXKSA1

Specifications

Input Capacitance Ciss Max Vds

890pF @ 100V

Reach Svhc

No SVHC

Fet Type

N-Channel

Fall Time Typ

14 ns

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Genişlik

4.57mm

Current Continuous Drain Id25

9A Ta

Kurşunsuz Kodu

yes

Element Configuration

Single

Gate Charge Qg Max Vgs

4nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Pulsed Drain Currentmax Idm

20A

Vgsth Max Id

3.5V @ 330μA

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

8 Weeks

Number Of Elements

1

Halogen Free

Halogen Free

Yükseklik

15.95mm

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

215 mJ

Jedec95 Code

TO-220AB

Pin Sayısı

3

Montaj Tipi

Through Hole

Case Connection

ISOLATED

Rise Time

14ns

Power Dissipation

83W

Continuous Drain Current Id

9A

Transistor Element Material

SILICON

Rds On Max Id Vgs

399m Ω @ 4.9A, 10V

Turn Off Delay Time

80 ns

Terminal Sayısı

3

Uzunluk

10.36mm

Drain To Source Breakdown Voltage

500V