IPP50R190CEXKSA1

Specifications

Drain To Source Breakdown Voltage

550V

Fet Type

N-Channel

Fall Time Typ

7.5 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

13V

Input Capacitance Ciss Max Vds

1137pF @ 100V

Transistor Element Material

SILICON

Continuous Drain Current Id

18.5A

Terminal Sayısı

3

Rds On Max Id Vgs

190m Ω @ 6.2A, 13V

Turn Off Delay Time

54 ns

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Current Continuous Drain Id25

18.5A Tc

Gate Charge Qg Max Vgs

47.2nC @ 10V

Element Configuration

Single

Kurşunsuz Kodu

yes

Ambalaj

Tube

Drainsource On Resistancemax

0.19Ohm

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

127W Tc

Vgsth Max Id

3.5V @ 510μA

Turn On Delay Time

9.5 ns

Seri

CoolMOS™ CE

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Pin Sayısı

3

Vgs Max

±20V

Jedec95 Code

TO-220AB

Kılıf / Paket

TO-220-3

Rise Time

8.5ns

Kurşunsuz

Lead Free

Max Dual Supply Voltage

500V