IPP45N06S4L08AKSA1

Specifications

Gate Charge Qg Max Vgs

64nC @ 10V

Drain Currentmax Abs Id

45A

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0079Ohm

Current Continuous Drain Id25

45A Tc

Drain To Source Voltage Vdss

60V

Terminal Pozisyonu

SINGLE

Terminal Sayısı

3

Rds On Max Id Vgs

8.2m Ω @ 45A, 10V

Input Capacitance Ciss Max Vds

4780pF @ 25V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~175°C TJ

Ds Breakdown Voltagemin

60V

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Montaj Tipi

Through Hole

Vgs Max

±16V

Avalanche Energy Rating Eas

97 mJ

Jedec95 Code

TO-220AB

Kılıf / Paket

TO-220-3

Case Connection

DRAIN

Yayın Yılı

2009

Seri

OptiMOS™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

2.2V @ 35μA

Pulsed Drain Currentmax Idm

180A

Parça Durumu

Discontinued

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

71W Tc