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IPP126N10N3GXKSA1

Infineon Technologies

IPP126N10N3GXKSA1

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.64
  • 10+ pcs$0.61
  • 100+ pcs$0.57
  • 500+ pcs$0.54

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Compliant

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Specifications

Yayın Yılı
2008
Seri
OptiMOS™
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn On Delay Time
14 ns
Qualification Status
Not Qualified
Vgsth Max Id
3.5V @ 46μA
Montaj
Through Hole
Power Dissipation Max
94W Tc
Parça Durumu
Active
Pin Sayısı
3
RoHS Durumu
ROHS3 Compliant
Halogen Free
Halogen Free
Number Of Elements
1
Fabrika Tedarik Süresi
13 Weeks
Power Dissipation
94W
Rise Time
8ns
Kılıf / Paket
TO-220-3
Kurşunsuz
Lead Free
Max Dual Supply Voltage
100V
Montaj Tipi
Through Hole
Vgs Max
±20V
Pin Sayısı
3
Avalanche Energy Rating Eas
70 mJ
Jedec95 Code
TO-220AB
Terminal Sayısı
3
Turn Off Delay Time
24 ns
Rds On Max Id Vgs
12.3m Ω @ 46A, 10V
Transistor Element Material
SILICON
Continuous Drain Current Id
58A
Input Capacitance Ciss Max Vds
2500pF @ 50V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Application
SWITCHING
Drive Voltage Max Rds On Min Rds On
6V 10V
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-55°C~175°C TJ
Gate To Source Voltage Vgs
20V
Fall Time Typ
5 ns
Fet Type
N-Channel
Configuration
SINGLE WITH BUILT-IN DIODE

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