IPP114N12N3GXKSA1

Specifications

Fall Time Typ

7 ns

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Rds On Max Id Vgs

11.4m Ω @ 75A, 10V

Turn Off Delay Time

30 ns

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

4310pF @ 60V

Continuous Drain Current Id

75A

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

65nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Current Continuous Drain Id25

75A Tc

Pulsed Drain Currentmax Idm

300A

Vgsth Max Id

4V @ 83μA

Qualification Status

Not Qualified

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

136W Tc

Jesd30 Code

R-PSFM-T3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Seri

OptiMOS™

Turn On Delay Time

19 ns

Power Dissipation

136W

Jedec95 Code

TO-220AB

Pin Sayısı

3

Vgs Max

±20V

Montaj Tipi

Through Hole