IPP100N08S2L07AKSA1

Specifications

Gate Charge Qg Max Vgs

246nC @ 10V

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0068Ohm

Current Continuous Drain Id25

100A Tc

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Terminal Sayısı

3

Turn Off Delay Time

85 ns

Rds On Max Id Vgs

6.8m Ω @ 80A, 10V

Input Capacitance Ciss Max Vds

5400pF @ 25V

Transistor Element Material

SILICON

Continuous Drain Current Id

100A

Fall Time Typ

22 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Halogen Free

Halogen Free

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

10 Weeks

Additional Feature

LOGIC LEVEL COMPATIBLE

Number Of Elements

1

Montaj Tipi

Through Hole

Vgs Max

±20V

Avalanche Energy Rating Eas

810 mJ

Jedec95 Code

TO-220AB

Rise Time

56ns

Kılıf / Paket

TO-220-3

Kurşunsuz

Contains Lead

Max Dual Supply Voltage

75V

Yayın Yılı

2006

Seri

OptiMOS™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED