IPP100N06S2L05AKSA2

Specifications

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0059Ohm

Drain To Source Breakdown Voltage

55V

Terminal Sayısı

3

Rds On Max Id Vgs

4.7m Ω @ 80A, 10V

Turn Off Delay Time

98 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

100A

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Kurşunsuz

Contains Lead

Max Dual Supply Voltage

55V

Pin Sayısı

3

Additional Feature

LOGIC LEVEL COMPATIBLE

Manufacturer Package Identifier

IPP100N06S2L-05

Parça Durumu

Active

Montaj

Through Hole

Power Dissipation Max

300W Tc

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

18 ns

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

230nC @ 10V

Kurşunsuz Kodu

yes

Element Configuration

Single

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

100A Tc

Fall Time Typ

24 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

REACH Uyumluluk Kodu

not_compliant

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

5660pF @ 25V

Power Dissipation

300W

Montaj Tipi

Through Hole

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

810 mJ