Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 55V
- Radyasyon Dayanımı
- No
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.005Ohm
- Gate Charge Qg Max Vgs
- 170nC @ 10V
- Current Continuous Drain Id25
- 100A Tc
- Ds Breakdown Voltagemin
- 55V
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- ECCN Kodu
- EAR99
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- N-Channel
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Terminal Sayısı
- 3
- Rds On Max Id Vgs
- 5m Ω @ 80A, 10V
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 100A
- Input Capacitance Ciss Max Vds
- 5110pF @ 25V
- Power Dissipation
- 300W
- Rise Time
- 31ns
- Kılıf / Paket
- TO-220-3
- Montaj Tipi
- Through Hole
- Vgs Max
- ±20V
- Jedec95 Code
- TO-220AB
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 1
- Vgsth Max Id
- 4V @ 250μA
- Pulsed Drain Currentmax Idm
- 400A
- Power Dissipation Max
- 300W Tc
- Montaj
- Through Hole
- Parça Durumu
- Discontinued
- Seri
- OptiMOS™
- Yayın Yılı
- 2006
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 21 ns
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