IPP093N06N3GXKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Fall Time Typ

5 ns

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

2900pF @ 30V

Reach Svhc

No SVHC

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

50A Tc

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

36nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Pulsed Drain Currentmax Idm

200A

Vgsth Max Id

4V @ 34μA

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Pin Sayısı

3

Rise Time

40ns

Power Dissipation

71W

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Continuous Drain Current Id

50A

Transistor Element Material

SILICON

Turn Off Delay Time

20 ns

Rds On Max Id Vgs

9.3m Ω @ 50A, 10V

Terminal Sayısı

3

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Parça Durumu

Active

Power Dissipation Max

71W Tc