IPP084N06L3GXKSA1

Specifications

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

60V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

7 ns

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Continuous Drain Current Id

50A

Input Capacitance Ciss Max Vds

4900pF @ 30V

Terminal Sayısı

3

Rds On Max Id Vgs

8.4m Ω @ 50A, 10V

Turn Off Delay Time

37 ns

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

60V

Current Continuous Drain Id25

50A Tc

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0084Ohm

Gate Charge Qg Max Vgs

29nC @ 4.5V

Montaj

Through Hole

Power Dissipation Max

79W Tc

Parça Durumu

Active

Pulsed Drain Currentmax Idm

200A

Vgsth Max Id

2.2V @ 34μA

Turn On Delay Time

15 ns

Seri

OptiMOS™

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-220-3

Rise Time

26ns

Montaj Tipi

Through Hole

Vgs Max

±20V

Jedec95 Code

TO-220AB

Power Dissipation

79W