IPP083N10N5AKSA1

Specifications

Drainsource On Resistancemax

0.0083Ohm

Number Of Channels

1

JESD-609 Kodu

e3

Continuous Drain Current Id

73A

Transistor Element Material

SILICON

Turn Off Delay Time

21 ns

Rds On Max Id Vgs

8.3m Ω @ 73A, 10V

Terminal Sayısı

3

Drain To Source Breakdown Voltage

100V

Weight

6.000006g

Transistor Application

SWITCHING

Max Dual Supply Voltage

100V

Kurşunsuz

Contains Lead

Kılıf / Paket

TO-220-3

Vgs Max

±20V

Turn On Delay Time

13 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Power Dissipation Max

100W Tc

Montaj

Through Hole

Parça Durumu

Active

Current Continuous Drain Id25

73A Tc

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Kurşunsuz Kodu

yes

Element Configuration

Single

Gate Charge Qg Max Vgs

37nC @ 10V

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

2730pF @ 50V

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

5 ns

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Case Connection

DRAIN