IPP052NE7N3GXKSA1

Specifications

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Fall Time Typ

8 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

80A

Input Capacitance Ciss Max Vds

4750pF @ 37.5V

Terminal Sayısı

3

Rds On Max Id Vgs

5.2m Ω @ 80A, 10V

Turn Off Delay Time

30 ns

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

80A Tc

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0052Ohm

Gate Charge Qg Max Vgs

68nC @ 10V

Kurşunsuz Kodu

yes

Power Dissipation Max

150W Tc

Montaj

Through Hole

Parça Durumu

Active

Qualification Status

Not Qualified

Vgsth Max Id

3.8V @ 91μA

Turn On Delay Time

14 ns

Yayın Yılı

2011

Seri

OptiMOS™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

11ns

Kılıf / Paket

TO-220-3

Kurşunsuz

Lead Free

Max Dual Supply Voltage

75V

Montaj Tipi

Through Hole

Vgs Max

±20V