IPP052N06L3GXKSA1

Specifications

Gate Charge Qg Max Vgs

50nC @ 4.5V

Kurşunsuz Kodu

yes

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

80A Tc

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

8400pF @ 30V

Fall Time Typ

12 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1

Pin Sayısı

3

Montaj Tipi

Through Hole

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

77 mJ

Rise Time

5ns

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2.2V @ 58μA

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.005Ohm

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Terminal Sayısı

3

Rds On Max Id Vgs

5m Ω @ 80A, 10V

Turn Off Delay Time

56 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

80A

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Pin Sayısı

3

Additional Feature

LOGIC LEVEL COMPATIBLE

Vgs Max

±20V