IPP04CN10NGXKSA1

Specifications

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Delay Time

34 ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

400A

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Parça Durumu

Not For New Designs

Montaj

Through Hole

Halogen Free

Halogen Free

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Min. Çalışma Sıcaklığı

-55°C

Number Of Elements

1

Power Dissipation

300W

Input Capacitance

13.8nF

Pin Sayısı

3

Avalanche Energy Rating Eas

1000 mJ

Kılıf / Paket

TO-220

Rise Time

78ns

Max Power Dissipation

300W

Kurşunsuz

Lead Free

Max Dual Supply Voltage

100V

Terminal Sayısı

3

Turn Off Delay Time

76 ns

Reach Svhc

No SVHC

Maks. Çalışma Sıcaklığı

175°C

Continuous Drain Current Id

100A

Fall Time Typ

25 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Threshold Voltage

3V

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

100V

Element Configuration

Single

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Rds On Max

4.2 mΩ