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IPP045N10N3GXKSA1

Infineon Technologies

IPP045N10N3GXKSA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Pulsed Drain Currentmax Idm
400A
Vgsth Max Id
3.5V @ 150μA
Montaj
Through Hole
Power Dissipation Max
214W Tc
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2008
Seri
OptiMOS™
Turn On Delay Time
27 ns
Power Dissipation
214W
Max Dual Supply Voltage
100V
Kurşunsuz
Lead Free
Kılıf / Paket
TO-220-3
Rise Time
59ns
Jedec95 Code
TO-220AB
Pin Sayısı
3
Vgs Max
±20V
Montaj Tipi
Through Hole
RoHS Durumu
ROHS3 Compliant
Pin Sayısı
3
Halogen Free
Halogen Free
Number Of Elements
1
Fabrika Tedarik Süresi
13 Weeks
Transistor Application
SWITCHING
Gate To Source Voltage Vgs
20V
Çalışma Sıcaklığı
-55°C~175°C TJ
ECCN Kodu
EAR99
Drive Voltage Max Rds On Min Rds On
6V 10V
Fall Time Typ
14 ns
Fet Type
N-Channel
Configuration
SINGLE WITH BUILT-IN DIODE
Rds On Max Id Vgs
4.5m Ω @ 100A, 10V
Turn Off Delay Time
48 ns
Terminal Sayısı
3
Continuous Drain Current Id
100A
Transistor Element Material
SILICON
Input Capacitance Ciss Max Vds
8410pF @ 50V
Radyasyon Dayanımı
No
JESD-609 Kodu
e3
Terminal Kaplaması
Tin (Sn)

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