IPP030N10N5AKSA1

Specifications

Terminal Sayısı

3

Turn Off Delay Time

52 ns

Rds On Max Id Vgs

3m Ω @ 100A, 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Input Capacitance Ciss Max Vds

10300pF @ 50V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Fall Time Typ

17 ns

Drain To Source Breakdown Voltage

100V

Fet Type

N-Channel

Weight

6.000006g

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.003Ohm

Gate Charge Qg Max Vgs

139nC @ 10V

Element Configuration

Single

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

120A Tc

Number Of Channels

1

Yayın Yılı

2013

Seri

OptiMOS™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

25 ns

Vgsth Max Id

3.8V @ 184μA

Pulsed Drain Currentmax Idm

480A

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

250W Tc

Montaj

Through Hole

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

Rise Time

15ns

Kılıf / Paket

TO-220-3