IPP028N08N3GXKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Fall Time Typ

33 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

14200pF @ 40V

Reach Svhc

No SVHC

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

100A Tc

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

206nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Vgsth Max Id

3.5V @ 270μA

Pulsed Drain Currentmax Idm

400A

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Jedec95 Code

TO-220AB

Pin Sayısı

3

Montaj Tipi

Through Hole

Rise Time

73ns

Power Dissipation

300W

Fabrika Tedarik Süresi

13 Weeks

Number Of Elements

1

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Continuous Drain Current Id

100A

Transistor Element Material

SILICON

Rds On Max Id Vgs

2.8m Ω @ 100A, 10V

Turn Off Delay Time

86 ns

Terminal Sayısı

3

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0028Ohm

Parça Durumu

Active