Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 14400pF @ 37.5V
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 120A
- Terminal Sayısı
- 3
- Rds On Max Id Vgs
- 2.3m Ω @ 100A, 10V
- Turn Off Delay Time
- 70 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fet Type
- N-Channel
- Fall Time Typ
- 22 ns
- Transistor Application
- SWITCHING
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- ECCN Kodu
- EAR99
- Drive Voltage Max Rds On Min Rds On
- 10V
- Current Continuous Drain Id25
- 120A Tc
- Gate Charge Qg Max Vgs
- 206nC @ 10V
- Kurşunsuz Kodu
- yes
- Ambalaj
- Tube
- Operating Mode
- ENHANCEMENT MODE
- Terminal Pozisyonu
- SINGLE
- Terminal Kaplaması
- Tin (Sn)
- JESD-609 Kodu
- e3
- Radyasyon Dayanımı
- No
- Turn On Delay Time
- 19 ns
- Yayın Yılı
- 2008
- Seri
- OptiMOS™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Power Dissipation Max
- 300W Tc
- Montaj
- Through Hole
- Pulsed Drain Currentmax Idm
- 480A
- Vgsth Max Id
- 3.8V @ 273μA
- Fabrika Tedarik Süresi
- 13 Weeks
- Number Of Elements
- 1
- Halogen Free
- Halogen Free
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Montaj Tipi
- Through Hole
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