IPP023N10N5AKSA1

Specifications

Current Continuous Drain Id25

120A Tc

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

210nC @ 10V

Kurşunsuz Kodu

yes

Element Configuration

Single

Terminal Kaplaması

Tin (Sn)

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

15600pF @ 50V

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Fall Time Typ

29 ns

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Rise Time

26ns

Case Connection

DRAIN

Montaj Tipi

Through Hole

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

979 mJ

Yayın Yılı

2013

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

480A

Vgsth Max Id

3.8V @ 270μA

JESD-609 Kodu

e3

Number Of Channels

1

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Terminal Sayısı

3

Turn Off Delay Time

77 ns

Rds On Max Id Vgs

2.3m Ω @ 100A, 10V

Drain To Source Breakdown Voltage

100V

Weight

6.000006g

Transistor Application

SWITCHING

Threshold Voltage

3V