IPN80R1K2P7ATMA1

Specifications

Current Continuous Drain Id25

4.5A Tc

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

11nC @ 10V

Terminal Pozisyonu

DUAL

Drain To Source Voltage Vdss

800V

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

300pF @ 500V

Rds On Max Id Vgs

1.2 Ω @ 1.7A, 10V

Terminal Sayısı

3

Fet Type

N-Channel

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

800V

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Kılıf / Paket

TO-261-3

Vgs Max

±20V

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ P7

Yayın Yılı

2014

Power Dissipation Max

6.8W Tc

Jesd30 Code

R-PDSO-G3

Parça Durumu

Active

Vgsth Max Id

3.5V @ 80μA