IPN70R1K2P7SATMA1

Specifications

Parça Durumu

Active

Jesd30 Code

R-PDSO-G3

Power Dissipation Max

6.3W Tc

Vgsth Max Id

3.5V @ 40μA

Turn On Delay Time

12 ns

Yayın Yılı

2014

Seri

CoolMOS™ P7

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Vgs Max

±16V

Kılıf / Paket

TO-261-3

Case Connection

DRAIN

Power Dissipation

6.3W

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Yükseklik

1.8mm

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Drain To Source Breakdown Voltage

700V

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-40°C~150°C TJ

Gate To Source Voltage Vgs

16V

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

174pF @ 400V

Transistor Element Material

SILICON

Continuous Drain Current Id

4.5A

Terminal Sayısı

3

Max Junction Temperature Tj

150°C

Turn Off Delay Time

60 ns

Rds On Max Id Vgs

1.2 Ω @ 900mA, 10V

Terminal Pozisyonu

DUAL

Number Of Channels

1

Current Continuous Drain Id25

4.5A Tc

Gate Charge Qg Max Vgs

4.8nC @ 10V