IPN70R1K0CEATMA1

Specifications

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

328pF @ 100V

Terminal Sayısı

3

Rds On Max Id Vgs

1 Ω @ 1.5A, 10V

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-40°C~150°C TJ

Ds Breakdown Voltagemin

700V

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Current Continuous Drain Id25

7.4A Tc

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

1Ohm

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

14.9nC @ 10V

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Drain To Source Voltage Vdss

750V

Terminal Kaplaması

Tin (Sn)

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-G3

Power Dissipation Max

5W Tc

Parça Durumu

Active

Vgsth Max Id

3.5V @ 150μA

Pulsed Drain Currentmax Idm

12.7A

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-261-3

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Vgs Max

±20V

Avalanche Energy Rating Eas

50 mJ