IPN60R3K4CEATMA1

Specifications

Terminal Pozisyonu

DUAL

Drain To Source Voltage Vdss

600V

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

2.6A Tc

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

4.6nC @ 10V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-40°C~150°C TJ

Threshold Voltage

3V

Ds Breakdown Voltagemin

600V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Continuous Drain Current Id

2.6A

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

93pF @ 100V

Rds On Max Id Vgs

3.4 Ω @ 500mA, 10V

Terminal Sayısı

3

Case Connection

DRAIN

Kılıf / Paket

SOT-223-3

Montaj Tipi

Surface Mount

Vgs Max

±20V

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Power Dissipation Max

5W Tc

Montaj

Surface Mount

Parça Durumu

Active

Vgsth Max Id

3.5V @ 40μA

Fet Feature

Super Junction

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED