IPN60R2K1CEATMA1

Specifications

Terminal Kaplaması

Tin (Sn)

Drain To Source Voltage Vdss

600V

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

6.7nC @ 10V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

3.7A Tc

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

600V

Threshold Voltage

3V

Çalışma Sıcaklığı

-40°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Fet Type

N-Channel

Rds On Max Id Vgs

2.1 Ω @ 800mA, 10V

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

140pF @ 100V

Continuous Drain Current Id

3.7A

Reach Svhc

No SVHC

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Vgs Max

±20V

Case Connection

DRAIN

Kılıf / Paket

SOT-223-3

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Vgsth Max Id

3.5V @ 60μA

Parça Durumu

Active

Power Dissipation Max

5W Tc

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)