IPN50R3K0CEATMA1

Specifications

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

500V

Threshold Voltage

3V

Çalışma Sıcaklığı

-40°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

13V

Terminal Formu

GULL WING

Reach Svhc

No SVHC

Transistor Element Material

SILICON

Continuous Drain Current Id

2.6A

Input Capacitance Ciss Max Vds

84pF @ 100V

Terminal Sayısı

3

Rds On Max Id Vgs

3 Ω @ 400mA, 13V

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Drain To Source Voltage Vdss

500V

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

2.6A Tc

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

3Ohm

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

4.3nC @ 10V

Kurşunsuz Kodu

yes

Power Dissipation Max

5W Tc

Parça Durumu

Active

Vgsth Max Id

3.5V @ 30μA

Yayın Yılı

2013

Seri

CoolMOS™ CE

Nem Hassasiyeti (MSL)

3 (168 Hours)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

SOT-223-3

Case Connection

DRAIN

Vgs Max

±20V

Montaj Tipi

Surface Mount

Number Of Elements

1