IPL65R650C6SATMA1

Specifications

Fet Type

N-Channel

Weight

75.891673mg

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

13 ns

Terminal Formu

NO LEAD

Continuous Drain Current Id

6.7A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

440pF @ 100V

Rds On Max Id Vgs

650m Ω @ 2.1A, 10V

Turn Off Delay Time

80 ns

Terminal Sayısı

5

Terminal Pozisyonu

DUAL

Number Of Channels

1

Current Continuous Drain Id25

6.7A Tc

Drainsource On Resistancemax

0.65Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

21nC @ 10V

Montaj

Surface Mount

Power Dissipation Max

56.8W Tc

Jesd30 Code

R-PDSO-N5

Parça Durumu

Active

Vgsth Max Id

3.5V @ 210μA

Turn On Delay Time

12 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

CoolMOS™ C6

Yayın Yılı

2008

Kurşunsuz

Contains Lead

Case Connection

DRAIN

Max Dual Supply Voltage

650V

Kılıf / Paket

8-PowerTDFN

Rise Time

9ns