IPL65R190E6AUMA1

Specifications

Yayın Yılı

2013

Seri

CoolMOS™ E6

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

2A (4 Weeks)

Turn On Delay Time

12 ns

Vgsth Max Id

3.5V @ 700μA

Pulsed Drain Currentmax Idm

66A

Parça Durumu

Obsolete

Power Dissipation Max

151W Tc

Montaj

Surface Mount

Halogen Free

Halogen Free

Pin Sayısı

4

RoHS Durumu

RoHS Compliant

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Montaj Tipi

Surface Mount

Vgs Max

±20V

Rise Time

11ns

Kılıf / Paket

4-PowerTSFN

Kurşunsuz

Contains Lead

Case Connection

DRAIN

Max Dual Supply Voltage

650V

Terminal Sayısı

4

Rds On Max Id Vgs

190m Ω @ 7.3A, 10V

Turn Off Delay Time

112 ns

Input Capacitance Ciss Max Vds

1620pF @ 100V

Transistor Element Material

SILICON

Continuous Drain Current Id

20.2A

Terminal Formu

NO LEAD

Fall Time Typ

10 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-40°C~150°C TJ

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Fet Type

N-Channel

Drain To Source Breakdown Voltage

650V

Gate Charge Qg Max Vgs

73nC @ 10V

Element Configuration

Single

Ambalaj

Tape & Reel (TR)