IPL65R070C7AUMA1

Specifications

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Terminal Formu

NO LEAD

Fall Time Typ

11 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

28A

Input Capacitance Ciss Max Vds

3020pF @ 100V

Terminal Sayısı

4

Rds On Max Id Vgs

70m Ω @ 8.5A, 10V

Turn Off Delay Time

92 ns

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

28A Tc

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.07Ohm

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

64nC @ 10V

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Power Dissipation Max

169W Tc

Parça Durumu

Active

Vgsth Max Id

4V @ 850μA

Turn On Delay Time

14 ns

Seri

CoolMOS™ C7

Yayın Yılı

2013

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

2A (4 Weeks)

Rise Time

6ns

Kılıf / Paket

4-PowerTSFN

Max Dual Supply Voltage

650V

Case Connection

DRAIN

Kurşunsuz

Contains Lead

Vgs Max

±20V