IPL60R285P7AUMA1

Specifications

Kılıf / Paket

4-PowerTSFN

Case Connection

DRAIN

Vgs Max

±20V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

38 mJ

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

S-PSSO-N4

Power Dissipation Max

59W Tc

Parça Durumu

Active

Pulsed Drain Currentmax Idm

36A

Vgsth Max Id

4V @ 190μA

Yayın Yılı

2014

Seri

CoolMOS™ P7

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

3 (168 Hours)

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Drain To Source Voltage Vdss

600V

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

13A Tc

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.285Ohm

Gate Charge Qg Max Vgs

18nC @ 10V

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Çalışma Sıcaklığı

-40°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

761pF @ 400V

Terminal Sayısı

4