IPL60R105P7AUMA1

Specifications

Vgsth Max Id

4V @ 530μA

Pulsed Drain Currentmax Idm

100A

Parça Durumu

Active

Power Dissipation Max

137W Tc

Jesd30 Code

S-PSSO-N4

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

3 (168 Hours)

Yayın Yılı

2014

Seri

CoolMOS™ P7

Avalanche Energy Rating Eas

105 mJ

Montaj Tipi

Surface Mount

Vgs Max

±20V

Case Connection

DRAIN

Kılıf / Paket

4-PowerTSFN

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Terminal Formu

NO LEAD

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-40°C~150°C TJ

Ds Breakdown Voltagemin

600V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

not_compliant

Fet Type

N-Channel

Rds On Max Id Vgs

105m Ω @ 10.5A, 10V

Terminal Sayısı

4

Input Capacitance Ciss Max Vds

1952pF @ 400V

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Drain To Source Voltage Vdss

650V

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

45nC @ 10V

Drainsource On Resistancemax

0.105Ohm

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)