IPI80N06S2L05AKSA2

Specifications

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Yayın Yılı

2006

Turn Off Delay Time

67 ns

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

800 mJ

Number Of Elements

1

Radyasyon Dayanımı

No

Max Dual Supply Voltage

55V

Current Continuous Drain Id25

80A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Through Hole

Turn On Delay Time

19 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

Vgsth Max Id

2V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Additional Feature

LOGIC LEVEL COMPATIBLE

Kurşunsuz Kodu

yes

Power Dissipation Max

300W Tc

Fet Type

N-Channel

Continuous Drain Current Id

80A

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Obsolete

Drainsource On Resistancemax

0.006Ohm

Gate Charge Qg Max Vgs

230nC @ 10V

Input Capacitance Ciss Max Vds

5700pF @ 25V

Fall Time Typ

90 ns

Montaj Tipi

Through Hole

Rds On Max Id Vgs

4.8m Ω @ 80A, 10V

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Rise Time

93ns