IPI60R299CPXKSA1

Specifications

Power Dissipation Max

96W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Terminal Sayısı

3

Vgsth Max Id

3.5V @ 440μA

Drain To Source Voltage Vdss

600V

Drain Currentmax Abs Id

11A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™

Pulsed Drain Currentmax Idm

34A

Drainsource On Resistancemax

0.299Ohm

Input Capacitance Ciss Max Vds

1100pF @ 100V

Gate Charge Qg Max Vgs

29nC @ 10V

Rds On Max Id Vgs

299m Ω @ 6.6A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

REACH Uyumluluk Kodu

compliant

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Obsolete

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

290 mJ

Number Of Elements

1

Pin Sayısı

3

Yayın Yılı

2008

Jesd30 Code

R-PSIP-T3

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

11A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application

SWITCHING