IPI60R199CPXKSA1

Specifications

Rds On Max Id Vgs

199m Ω @ 9.9A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Drainsource On Resistancemax

0.199Ohm

Input Capacitance Ciss Max Vds

1520pF @ 100V

Gate Charge Qg Max Vgs

43nC @ 10V

Parça Durumu

Not For New Designs

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Power Dissipation Max

139W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

16A

Drain To Source Voltage Vdss

600V

Vgsth Max Id

3.5V @ 660μA

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

51A

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Qualification Status

Not Qualified

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

16A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Pin Sayısı

3

Avalanche Energy Rating Eas

436 mJ

Jesd30 Code

R-PSIP-T3

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2008