IPI50R250CPXKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Qualification Status

Not Qualified

Power Dissipation

114W

Vgs Max

±20V

Turn On Delay Time

35 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Montaj

Through Hole

Current Continuous Drain Id25

13A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

500V

Pin Sayısı

3

Number Of Elements

1

Avalanche Energy Rating Eas

345 mJ

RoHS Durumu

RoHS Compliant

Jesd30 Code

R-PSIP-T3

Yayın Yılı

2008

Turn Off Delay Time

80 ns

Gate To Source Voltage Vgs

20V

Ambalaj

Tube

Rise Time

14ns

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

8 Weeks

Montaj Tipi

Through Hole

Fall Time Typ

11 ns

Rds On Max Id Vgs

250m Ω @ 7.8A, 10V

Gate Charge Qg Max Vgs

36nC @ 10V

Input Capacitance Ciss Max Vds

1420pF @ 100V

Drainsource On Resistancemax

0.25Ohm

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Parça Durumu

Obsolete

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

13A

Kurşunsuz

Lead Free

Fet Type

N-Channel

Halogen Free

Halogen Free

Kurşunsuz Kodu

yes